IXFR24N80P Datasheet, PDF (1/4 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET

PolarHV^TM HiPerFET ^{IXFR 24N80P}
Power MOSFET
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
V = 800 V
DSS
I_D25 =
13 A
≤ R_DS(on) 420 mΩ
t_rr
≤ 200 ns
Symbol
V
DSS
V_DGR
V_GSS
V
GSM
I
D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T
L
T_SOLD
V_ISOL
F
C
Weight
Test Conditions
T
J
= 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T
C
=
25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/μs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
50/60 Hz, RMS, 1 minute
Mounting force
Maximum Ratings _{ISOPLUS247 (IXFR)}
800
V
E153432
800
V
±30
V
±40
V
G
DS
Isolated Tab
13
A
55
A
G = Gate D = Drain
12
A
S = Source
50
mJ
1.5
J
10
208
-55 ... +150
150
-55 ... +150
300
260
2500
20..120/4.6..27
5
V/ns
W
°C
°C
°C
°C
°C
V~
N/lb
g
Features
z _{Silicon chip on Direct-Copper-Bond}
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z _{International standard package}
z _{Fast recovery diode}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
Symbol
Test Conditions
(T
J
=
25°C,
unless
otherwise
specified)
BV
DSS
V
GS
=
0
V,
I
D
=
250
μA
V_GS(th)
V_DS = V_GS, I_D = 4 mA
I
GSS
V
GS
=
±30
V,
V
DS
=
0
V
I_DSS
V_DS = V_DSS
V =0V
GS
T
J
=
125°C
R_DS(on)
V_GS = 10 V, I_D = I_T (note 1)
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
Characteristic Values
Min. Typ. Max.
800
V
3.0
5.0 V
±100 nA
25 μA
1000 μA
420 mΩ
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
© 2006 IXYS All rights reserved
DS99600E(07/06)