IXFR24N100_08 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFET ISOPLUS247

HiPerFET^TM Power
MOSFET
ISOPLUS247^TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
IXFR24N100
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
Maximum Ratings
1000
V
1000
V
±20
V
±30
V
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
22
A
96
A
24
A
3
J
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
5
416
-55 ... +150
150
-55 ... +150
V/ns
W
°C
°C
°C
1.6mm (0.062 in.) from case for 10s
300
Plastic body for 10s
260
50/60 Hz, RMS
t = 1min
2500
I_ISOL ≤ 1mA
t = 1s
3000
Mounting force
20..120 / 4.5..27
°C
°C
V~
V~
N/lb.
5
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = 3mA
V_GS(th)
V_DS = V_GS, I_D = 8mA
I_GSS
V_GS = ±20V, V_DS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0V
R_DS(on)
V_GS = 10V, I_D = 12A, Note 1
Characteristic Values
Min. Typ. Max.
1000
V
3.0
5.5 V
±200 nA
T_J = 125°C
100 μA
2 mA
390 mΩ
V_DSS =
I_D25 =
≤ R_DS(on)
t
rr
≤
1000V
22A
390mΩ
250ns
ISOPLUS247
E153432
Isolated Tab
G = Gate
D = Drain
S = Source
Features
• Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
• Low drain to tab capacitance(<30pF)
• Low R_{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell structure
• Avalanche rated
l_{• Fast intrinsic Rectifier}
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor drives
Advantages
• Easy assembly
• Space savings
• High power density
© 2008 IXYS CORPORATION, All rights reserved
DS98599C(10/08)