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| IXFR230N20T Datasheet, PDF (1/6 Pages) IXYS Corporation – GigaMOS Power MOSFET | |||
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GigaMOSTM
Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFR230N20T
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
VISOL
FC
Weight
Test Conditions
TJ = 25ï°C to 175ï°C
TJ = 25ï°C to 175ï°C, RGS = 1Mï
Continuous
Transient
TC = 25ï°C
TC = 25ï°C, Pulse Width Limited by TJM
TC = 25ï°C
TC = 25ï°C
IS ï£ IDM, VDD ï£ VDSS, TJ ï£ 175°C
TC = 25ï°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, 1 Minute
Mounting Force
Maximum Ratings
200
V
200
V
ï± 20
V
ï± 30
V
156
A
630
A
100
A
5
J
20
V/ns
600
W
-55 ... +175
ï°C
175
ï°C
-55 ... +175
ï°C
300
ï°C
260
ï°C
2500
V~
20..120/4.5..27
5
N/lb.
g
Symbol
Test Conditions
(TJ = 25ï°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS
VGS = ï± 20V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 150ï°C
RDS(on)
VGS = 10V, ID = 60A, Note 1
Characteristic Values
Min. Typ. Max.
200
V
3.0
5.0 V
ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï±ï 200 nA
50 ïA
3 mA
8.0 mï
VDSS =
ID25 =
RDS(on) ï£
trr
ï£
200V
156A
8.0mï
200ns
ISOPLUS247
E153432
G
D
S
Isolated Tab
G = Gate D = Drain
S = Source
Features
ï¬ Silicon Chip on Direct-Copper Bond
(DCB) Substrate
ï¬ Isolated Mounting Surface
ï¬ 2500V~ Electrical Isolation
ï¬ Fast Intrinsic Diode
ï¬ Avalanche Rated
ï¬ Low Package Inductance
Advantages
ï¬ Easy to Mount
ï¬ Space Savings
ï¬ High Power Density
Applications
ï¬ Synchronous Recification
ï¬ DC-DC Converters
ï¬ Battery Chargers
ï¬ Switch-Mode and Resonant-Mode
Power Supplies
ï¬ DC Choppers
ï¬ AC Motor Drives
ï¬ Uninterruptible Power Supplies
ï¬ High Speed Power Switching
Applications
© 2014 IXYS CORPORATION, All Rights Reserved
DS100234B(04/14)
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