IXFR21N100Q Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Back Surface)

HiPerFET^TM Power MOSFETs IXFR 21N100Q
ISOPLUS247^TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode, Low Q_g,
High dv/dt, Low t , HDMOS^TM Family
rr
Preliminary data sheet
V_DSS = 1000 V
I_D25 = 19 A
R_DS(on) = 0.50 W
t_rr £ 250 ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_D(RMS)
I
DM
I_AR
E_AR
E
AS
dv/dt
P
D
T_J
T
JM
T_stg
T_L
V_ISOL
Weight
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R
DS(on)
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MW
Continuous
Transient
T_C = 25°C (MOSFET chip capability)
External lead (current limit)
T
C
= 25°C, Note 1
T_C = 25°C
T_C = 25°C
T
C
= 25°C
I_S £ I_DM, di/dt £ 100 A/ms, V_DD £ V_DSS
T
J
£
150°C,
R
G
=
2
W
T
C
= 25°C
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS t = 1 min
Maximum Ratings
1000
1000
±20
±30
19
84
21
21
60
2.3
5
V
V
V
V
A
A
A
A
mJ
J
V/ns
400
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
2500
V~
5
g
Test Conditions
V_GS = 0 V, I_D = 250mA
V_DS = V_GS, I_D = 8mA
V_GS = ±20 V, V_DS = 0
V_DS = V_DSS
V =0V
GS
V = 10 V, I = I
GS
DT
Notes 2, 3
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
1000
V
2.5
T
J
= 125°C
4.5 V
±100 nA
100 mA
2 mA
0.5 W
ISOPLUS 247^TM
E153432
G = Gate
S = Source
Isolated backside*
D = Drain
* Patent pending
Features
• Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
• IXYS advanced low Q process
g
• Low gate charge and capacitances
- easier to drive
- faster switching
• Low drain to tab capacitance(<30pF)
• Low R_{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell structure
• Rated for Unclamped Inductive Load
Switching (UIS)
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
Advantages
• Easy assembly
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98723 (05/24/00)
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