IXFR200N10P_06 Datasheet, PDF (1/5 Pages) IXYS Corporation – Polar HiPerFET Power MOSFET

Polar^TM HiPerFET
Power MOSFET
Electrically Isolated Tab
IXFR 200N10P
N-Channel Enhancement Mode
Fast Recovery Diode, Avavanche Rated
V=
DSS
I_D25 =
≤ R_DS(on)
t
RR
≤
100 V
133 A
9 mΩ
150 ns
Symbol
Test Conditions
Maximum Ratings
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_D(RMS)
I_DM
I
AR
E_AR
E
AS
dv/dt
P_D
T_J
T_JM
T_stg
V_ISOL
F_C
Weight
T_J = 25°C to 175°C
T_J = 25°C to 175°C; R_GS = 1 MΩ
Continous
Transient
T_C = 25°C
External lead current limit
T_C = 25°C, pulse width limited by T_JM
T
C
= 25°C
T_C = 25°C
T
C
= 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/μs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 4 Ω
T_C = 25°C
50/60 Hz, RMS, 1 minute
Mounting Force
100
V
100
V
±20
V
±30
V
133
A
75
A
400
A
60
A
100
mJ
4
J
10
V/ns
300
-55 ... +175
175
-55 ... +150
2500
20..120/4.6..20
5
W
°C
°C
°C
V~
Nm/lb
g
Symbol
Test Conditions
(T_J = 25°C unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250 μA
Characteristic Values
Min. Typ. Max.
100
V
V_GS(th)
V_DS = V_GS, I_D = 8 mA
3.0
5.0 V
I_GSS
V_GS = ±20 V_DC, V_DS = 0
±100 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
V_GS = 0 V
T_J = 150°C
T_J = 175°C
25 μA
250 μA
1000 μA
R_DS(on)
V_GS = 10 V, I_D = 100 A, Note 1
V_GS = 15 V, I_D = 400A, Note 1
9 mΩ
6.0
mΩ
ISOPLUS247 (IXFR)
E153432
G
DS
ISOLATED TAB
G = Gate
S = Source
D = Drain
Features
z _{Silicon chip on Direct-Copper-Bond}
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z _{Low drain to tab capacitance(<30pF)}
z _{Fast recovery intrinsic diode}
z _{Avalanche voltage rated}
Applications
z _{DC-DC converters}
z _{Battery chargers}
z _{Switched-mode and resonant-mode}
power supplies
z _{DC choppers}
z _{AC motor control}
Advantages
z _{Easy assembly}
z _{Space savings}
z _{High power density}
© 2006 IXYS All rights reserved
DS99238E(03/06)