IXFR200N10P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarTM HiPerFET Power MOSFET

Advanced Technical Information
Polar^TM HiPerFET
Power MOSFET
Electrically Isolated Tab
IXFR 200N10P
N-Channel Enhancement Mode
Fast Recovery Diode, Avavanche Rated
V_DSS =
I_D25 =
= R_DS(on)
100 V
133 A
8 mΩ
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_D(RMS)
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
V_ISOL
F_C
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C; R_GS = 1 MΩ
T_C = 25°C
External lead current limit
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 4 Ω
T_C = 25°C
50/60 Hz, RMS, 1 minute
Mounting Force
Maximum Ratings
100
V
100
V
±20
V
±30
V
133
A
75
A
400
A
60
A
100
mJ
4
J
10
V/ns
350
-55 ... +175
175
-55 ... +150
2500
20..120/4.6..20
5
W
°C
°C
°C
V~
Nm/lb
g
ISOPLUS247 (IXFR)
E153432
G
DS
ISOLATED TAB
G = Gate
S = Source
D = Drain
Features
z _{Silicon chip on Direct-Copper-Bond}
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z _{Low drain to tab capacitance(<30pF)}
z _{Fast recovery intrinsic diode}
Applications
z _{DC-DC converters}
z _{Battery chargers}
z _{Switched-mode and resonant-mode}
power supplies
z _{DC choppers}
z _{AC motor control}
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
V_DSS
V_GS = 0 V, I_D = 250 µA
Characteristic Values
Min. Typ. Max.
100
V
V_GS(th)
V_DS = V_GS, I_D = 500µA
3.0
5.0 V
I_GSS
V_GS = ±30 V_DC, V_DS = 0
±100 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
V_GS = 0 V
T_J = 150°C
T_J = 175°C
25 µA
250 µA
1000 µA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
V_GS = 15 V, I_D = 400A
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
8 mΩ
5.5
mΩ
Advantages
z _{Easy assembly}
z _{Space savings}
z _{High power density}
© 2005 IXYS All rights reserved
DS99239(06/05)