IXFR18N90P Datasheet, PDF (1/4 Pages) IXYS Corporation – Polar Power MOSFET HiPerFET

Preliminary Technical Information
Polar^TM Power MOSFET
HiPerFET^TM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFR18N90P
V_DSS = 900V
I_D25 = 10.5A
≤ R_DS(on) 660mΩ
t_rr
≤ 300ns
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
V_ISOL
F_C
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
Maximum Ratings
900
V
900
V
± 30
V
± 40
V
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
10.5
A
36
A
9
A
800
mJ
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
15
200
-55 ... +150
150
-55 ... +150
V/ns
W
°C
°C
°C
Maximum lead temperature for soldering
Plastic body for 10s
300
°C
260
°C
50/60 Hz, RMS, 1 minute
2500
V~
Mounting force
20..120/4.5..27
N/lb.
5
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = 1mA
V_GS(th)
V_DS = V_GS, I_D = 1mA
I_GSS
V_GS = ± 30V, V_DS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 9A, Note 1
Characteristic Values
Min. Typ. Max.
900
V
3.0
6.0 V
± 100 nA
25 μA
1.5 mA
660 mΩ
ISOPLUS247
E153432
Isolated Tab
G = Gate D = Drain
S = Source
Fearures
z _{Silicon chip on Direct-Copper Bond}
(DCB) substrate
z _{Isolated mounting surface}
z _{2500V electrical isolation}
z _{Fast intrinsic diode}
z _{Avalanche rated}
z _{Low package inductance}
Advantages
z _{Low gate drive requirement}
z _{High power density}
Applications:
z _{Switched-mode and resonant-mode}
power supplies
z _{DC-DC Converters}
z _{Laser Drivers}
z _{AC and DC motor drives}
z _{Robotics and servo controls}
© 2008 IXYS CORPORATION, All rights reserved
DS100058(10/08)