IXFR180N15P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET ISOPLUS247

PolarHV^TM HiPerFET ^{IXFR 180N15P}
Power MOSFET
ISOPLUS247^TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
V_DSS
I_D25
R_DS(on)
t_rr
= 150 V
= 100 A
≤ 13 mΩ
≤ 200 ns
Symbol
V_DSS
V
DGR
V
GSS
V_GSM
I_D25
I
D(RMS)
I_DM
I
AR
E_AR
E
AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
V_ISOL
F_d
Weight
Test Conditions
T_J = 25° C to 175° C
T
J
=
25°
C
to
175°
C;
R
GS
=
1
MΩ
Continuous
Transient
T_C = 25° C
External Lead current limit
T_C = 25° C, pulse width limited by T_JM
T
C
= 25° C
T_C = 25° C
T
C
= 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤150° C, R_G = 4 Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, 1 minute
Mounting force
Maximum Ratings
150
V
150
V
±20
V
±30
V
100
A
75
A
380
A
60
A
100
mJ
4
J
10
V/ns
300
W
-55 ... +175
°C
175
°C
-55 ... +150
°C
300
°C
2500
V~
20..120 / 4.5..26
N/lb
5
g
ISOPLUS247 (IXFR)
E153432
G
D
S
G = Gate
S = Source
ISOLATED TAB
D = Drain
Features
l _{International standard isolated}
package
l _{UL recognized package}
l _{Silicon chip on Direct-Copper-Bond}
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
l _{Fast intrinsic diode}
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
V_DSS
V_GS = 0 V, I_D = 250 µA
Characteristic Values
Min. Typ. Max.
150
V
V_GS(th)
V_DS = V_GS, I_D = 4 mA
2.5
5.0 V
I_GSS
V_GS = ±20 V_DC, V_DS = 0
±100 nA
I_DSS
V_DS = V_DSS, V_GS = 0 V
T
J
=
150°
C
25 µA
1.5 mA
R_DS(on)
V_GS = 10 V, I_D = I_T , Note 1
13 mΩ
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2006 IXYS All rights reserved
DS99242(01/06)