IXFR14N100Q2 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFET Q2-Class

HiPerFET^TM
Power MOSFET
Q2-Class
IXFR14N100Q2
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q_g
Low intrinsic R_g, low t_rr
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
V_ISOL
F_C
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
Maximum Ratings
1000
V
1000
V
± 30
V
± 40
V
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
9.5
A
56
A
14
A
2.5
J
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
20
200
-55 ... +150
150
-55 ... +150
V/ns
W
°C
°C
°C
Maximum Lead Temperature for Soldering
Plastic Body for 10s
300
°C
260
°C
50/60 Hz, RMS, 1 minute
2500
V~
Mounting Force
20..120/4.5..27
N/lb.
5
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 4mA
I_GSS
V_GS = ± 30V, V_DS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 7A, Note 1
Characteristic Values
Min. Typ. Max.
1000
V
3.0
5.5 V
± 200 nA
25 μA
1 mA
1.1 Ω
V_DSS =
I_D25 =
≤ R_DS(on)
t_rr
≤
1000V
9.5A
1.1Ω
300ns
ISOPLUS247
E153432
Isolated Tab
G = Gate
S = Source
D = Drain
Features
• Double Metal Process for Low Gate
Resistance
• International Standard Package
• Epoxy Meet UL 94 V-0, Flammability
Classification
• Low Rds(on), Low Qg
• Avalanche Energy and Current Rated
• Fast Intrinsic Recfifier
Applications
• DC-DC Converters
• Switched-Mode and Resonant-Mode
Power Supplies, >500kHz Switching
• DC Choppers
• Pulse Generation
• Laser Drivers
Advantages
• Easy to Mount
• Space Savings
• High Power Density
© 2009 IXYS CORPORATION, All Rights Reserved
DS99229B(04/09)