IXFR140N30P Datasheet, PDF (1/5 Pages) IXYS Corporation – Polar Power MOSFET HiPerFET

Polar^TM Power MOSFET IXFR140N30P
HiPerFET^TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
Maximum Ratings
300
V
300
V
±20
V
±30
V
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
70
A
300
A
70
A
5
J
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
20
300
-55 ... +150
150
-55 ... +150
V/ns
W
°C
°C
°C
1.6mm (0.062 in.) from case for 10s
300
Plastic body for 10s
260
50/60 Hz, RMS
t = 1min
2500
I_ISOL ≤ 1mA
t = 1s
3000
Mounting force
20..120 / 4.5..27
°C
°C
V~
V~
N/lb.
5
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = 3mA
V_GS(th)
V_DS = V_GS, I_D = 8mA
I_GSS
V_GS = ±20V, V_DS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0V
R_DS(on)
V_GS = 10V, I_D = 70A, Note 1
T_J = 125°C
Characteristic Values
Min. Typ. Max.
300
V
3.0
5.0 V
±200 nA
25 μA
1 mA
20
26 mΩ
V_DSS =
I_D25 =
≤ R_DS(on)
t
rr
≤
300V
70A
26mΩ
200ns
ISOPLUS247 (IXFR)
E153432
Isolated Tab
G = Gate
D = Drain
S = Source
Features
z _{UL recognized package}
z _{Silicon chip on Direct-Copper-Bond}
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
z _{Fast intrinsic diode}
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
© 2008 IXYS CORPORATION, All rights reserved
DS99570F(5/08)