IXFR140N20P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHT HiPerFET Power MOSFET ISOPLUS247

PolarHT^TM HiPerFET IXFR 140N20P
Power MOSFET
ISOPLUS247^TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
V = 200 V
DSS
I_D25 = 90 A
≤ R_DS(on) 22 m Ω
t_rr ≤ 200 ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I
D(RMS)
I_DM
I_AR
E_AR
E_AS
Test Conditions
T_J = 25° C to 175° C
T_J = 25° C to 175° C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25° C
External lead current limit
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T_C = 25° C
T_C = 25° C
Maximum Ratings
200
V
200
V
±20
V
±30
V
90
A
75
A
280
A
60
A
100
mJ
4
J
ISOPLUS247 (IXFR)
E153432
G
D
S
(Isolated Tab)
G = Gate
S = Source
D = Drain
dv/dt
P_D
T_J
T_JM
T_stg
T
L
V
ISOL
M_d
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤150° C, R_G = 4 Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, 1 minute
Terminal torque
Mounting torque
10
V/ns
300
W
-55 ... +175
°C
175
°C
-55 ... +150
°C
300
°C
2500
V~
1.13/10 Nm/lb.in.
1.13/10 Nm/lb.in.
Weight
5
g
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250 µA
Characteristic Values
Min. Typ. Max.
200
V
V_GS(th)
V_DS = V_GS, I_D = 4 mA
2.5
5.0 V
I_GSS
V_GS = ±20 V_DC, V_DS = 0
±200 nA
I
DSS
V =V
DS
DSS
V_GS = 0 V
T_J = 150° C
25 µA
250 µA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
V = 15 V, I = 140A
GS
D
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
22 m Ω
17
mΩ
Features
l _{International standard isolated}
package
l _{UL recognized package}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
l _{Fast intrinsic diode}
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2006 IXYS All rights reserved
DS99298E(12/05)