IXFR12N100F Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs ISOPLUS247

HiPerFET^TM Power MOSFETs
V_DSS
I_D25
ISOPLUS247^TM
IXFR 12N100F 1000 V 10 A
F-Class: MegaHertz Switching
IXFR 10N100F 1000 V 9 A
(Electrically Isolated Back Surface)
t_rr ≤ 250 ns
N-Channel Enhancement Mode
Avalanche Rated, High dV/dt
Low Gate Charge and Capacitances
Preliminary Data Sheet
R_DS(on)
1.05 Ω
1.20 Ω
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
V_ISOL
Weight
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS t = 1 min
Maximum Ratings
12N100
10N100
12N100
10N100
12N100
10N100
1000
1000
±20
±30
10
9
48
40
12
10
31
1
5
V
V
V
V
A
A
A
A
A
A
mJ
J
V/ns
250
W
-40 ... +150
°C
150
°C
-40 ... +150
°C
300
°C
2500
V~
5
g
Test Conditions
V_GS = 0 V, I_D = 1mA
V_DS = V_GS, I_D = 4mA
V_GS = ±20 V, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
V_GS = 10 V, I_D = I_T
Notes 1 & 2
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
1000
V
3.0
5.5 V
±100 nA
T_J = 25°C
T_J = 125°C
12N100
10N100
50 µA
1.5 mA
1.05 Ω
1.2 Ω
ISOPLUS 247^TM (IXFR)
G
(TAB)
D
Isolated back surface*
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{RF capable MOSFETs}
z _{Double metal process for low gate}
resistance
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
z _{Fast intrinsic rectifier}
Applications
z _{DC-DC converters}
z _{Switched-mode and resonant-mode}
power supplies, >500kHz switching
z _{DC choppers}
z _{13.5 MHz industrial applications}
z _{Pulse generation}
z _{Laser drivers}
z _{RF amplifiers}
Advantages
z _{ISOPLUS 247}TM _{package for clip or}
spring mounting
z _{Space savings}
z _{High power density}
© 2002 IXYS All rights reserved
98934(7/02)