IXFR120N20 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFETTM Power MOSFETs ISOPLUS247

Advanced Technical Information
HiPerFET^TM Power MOSFETs
ISOPLUS247^TM
(Electrically Isolated Back Surface)
Single MOSFET Die
IXFR 120N20
V_DSS = 200 V
I_D25 = 105 A
R_DS(on) = 17 mW
t_rr £ 250 ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_D(RMS)
I_DM
I_AR
E_AR
E
AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
V
ISOL
Weight
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MW
Continuous
Transient
T_C = 25°C (MOSFET chip capability)
External lead (current limit)
T_C = 25°C, Note 1
T_C = 25°C
T_C = 25°C
T
C
= 25°C
I_S £ I_DM, di/dt £ 100 A/ms, V_DD £ V_DSS
T_J £ 150°C, R_G = 2 W
T_C = 25°C
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS t = 1 min
Maximum Ratings
200
V
200
V
±20
V
±30
V
105
A
76
A
480
A
120
A
60
mJ
3
J
5 V/ns
400
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
2500
V~
5
g
Test Conditions
V_GS = 0 V, I_D = 3mA
V_DS = V_GS, I_D = 8mA
V_GS = ±20 V, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
V_GS = 10 V, I_D = 60A
Note 2
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
200
V
2.0
4.0 V
±100 nA
T_J = 25°C
T_J = 125°C
100 mA
2 mA
17 mW
ISOPLUS 247^TM
E153432
G
D
Isolated back surface*
G = Gate
S = Source
D = Drain
* Patent pending
Features
• Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
• Low drain to tab capacitance(<25pF)
• Low R_{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
Advantages
• Easy assembly
• Space savings
• High power density
• Low noise to ground
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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