IXFR10N100Q Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs ISOPLUS247 Q CLASS

HiPerFET^TM Power MOSFETs
V_DSS
I_D25
ISOPLUS247^TM Q CLASS ^{IXFR 12N100Q 1000 V 10 A}
IXFR 10N100Q 1000 V 9 A
(Electrically Isolated Back Surface)
t
rr
≤
300
µs
N-Channel Enhancement Mode
Avalanche Rated, High dV/dt
Low Gate Charge and Capacitances
R_DS(on)
1.1 Ω
1.20 Ω
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
dv/dt
P_D
T_J
T_JM
T_stg
T_L
V_ISOL
Weight
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
Maximum Ratings
T
J
= 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
=
25°C,
Pulse
width
limited
by
T
JM
T
C
= 25°C
T_C = 25°C
I
S
≤
I,
DM
di/dt
≤
100
A/µs,
V
DD
≤
V
DSS
T_J ≤ 150°C, R_G = 2 Ω
T
C
= 25°C
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS t = 1 min
12N100
10N100
12N100
10N100
12N100
10N100
1000
1000
±20
±30
10
9
48
40
12
10
30
5
250
-55 ... +150
150
-55 ... +150
300
2500
5
V
V
V
V
A
A
A
A
A
A
mJ
V/ns
W
°C
°C
°C
°C
V~
g
Test Conditions
V_GS = 0 V, I_D = 3mA
V_DS = V_GS, I_D = 4mA
V_GS = ±20 V_DC, V_DS = 0
V_DS = 0.8•V_DSS
V_GS = 0 V
V = 10 V, I = I
GS
DT
Notes 1 & 2
Characteristic Values
(T_J
=
25°C,
unless otherwise specified)
min. typ. max.
1000
V
2.5
5.5 V
±100 nA
T_J = 25°C
T_J = 125°C
12N100
10N100
50 µA
1 mA
1.1 Ω
1.2 Ω
ISOPLUS 247^TM
Isolated back surface*
G = Gate
S = Source
D = Drain
* Patent pending
Features
● _{Silicon chip on Direct-Copper-Bond}
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
● _{Low drain to tab capacitance(<50pF)}
● _{Low RDS (on) HDMOS}TM _process
● _{Rugged polysilicon gate cell structure}
● _{Unclamped Inductive Switching (UIS)}
rated
● _{Fast intrinsic Rectifier}
Applications
● _{DC-DC converters}
● _{Battery chargers}
● _{Switched-mode and resonant-mode}
power supplies
● _{DC choppers}
● _{AC motor control}
Advantages
● _{Easy assembly}
● _{Space savings}
● _{High power density}
© 2002 IXYS All rights reserved
DS98589-B (10/02)