IXFQ24N50P2 Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarP2 HiperFET Power MOSFET

Advance Technical Information
PolarP2^TM HiperFET^TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFQ24N50P2
V_DSS =
I_D25
=
≤ R_DS(on)
≤ t_rr(typ)
500V
24A
270mΩ
200ns
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
Maximum Lead Temperature for Soldering
Plastic Body for 10s
Mounting Torque
Maximum Ratings
500
V
500
V
± 30
V
± 40
V
24
A
50
A
12
A
750
mJ
15
V/ns
480
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10
5.5
Nm/lb.in.
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 1mA
I_GSS
V_GS = ± 30V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS= 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
500
V
2.5
4.5 V
± 100 nA
25 μA
1 mA
270 mΩ
TO-3P
G
D
S
G = Gate
S = Source
Tab
D = Drain
Tab = Drain
Features
z _{Avalanche Rated}
z _{Fast Intrinsic Diode}
z _{Dynamic dv/dt Rated}
z _{Low Package Inductance}
Advantages
z _{High Power Density}
z _{Easy to Mount}
z _{Space Savings}
Applications
z _{Switch-Mode and Resonant-Mode}
Power Supplies
z _{DC-DC Converters}
z _{Laser Drivers}
z _{AC and DC Motor Drives}
z _{Robotics and Servo Controls}
© 2010 IXYS CORPORATION, All Rights Reserved
DS100271(06/10)