IXFP8N50PM Datasheet, PDF (1/2 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET

Preliminary Technical Information
PolarHV^TMHiPerFET
Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFP 8N50PM
V = 500 V
DSS
I_D25 = 4.4 A
≤ R_DS(on) 0.8 Ω
trr ≤ 200 ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I
D25
I_DM
I_AR
E
AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25° C to 150° C
T_J = 25° C to 150° C; R_GS = 1 MΩ
Continuous
Transient
T
C
= 25° C
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T
C
= 25° C
T_C = 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤150° C, R_G = 18 Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
Maximum Ratings
500
V
500
V
±30
V
±40
V
4.4
A
14
A
8
A
20
mJ
300
mJ
10
V/ns
42
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
4
g
Symbol
Test Conditions
(T_J = 25° C unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250 µA
Characteristic Values
Min. Typ. Max.
500
V
V
GS(th)
V = V , I = 1 mA
DS
GS D
3.0
5.5 V
I_GSS
V_GS = ±30 V_DC, V_DS = 0
±100 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 125° C
5 µA
500 µA
R_DS(on)
V_GS = 10 V, I_D = 4 A
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
0.8 Ω
OVERMOLDED TO-220
(IXTP...M) OUTLINE
G _DS
Isolated Tab
G = Gate
S = Source
D = Drain
Features
l _{Plastic overmolded tab for electrical}
isolation
l _{International standard package}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
l _{Fast Intrinsic Diode}
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2006 IXYS All rights reserved
DS99484E(04/06)