IXFP7N80PM Datasheet, PDF (1/4 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET

PolarHV^TM HiPerFET
Power MOSFET
(Electrically Isolated Tab)
IXFP7N80PM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
V_DSS = 800 V
I_D25 = 3.5 A
R_DS(on) ≤ 1.44 Ω
t_rr
≤ 250 ns
Symbol
V
DSS
V_DGR
V_GSS
V
GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P
D
T_J
T_JM
T
stg
T
L
T_SOLD
M_d
Weight
Test Conditions
T
J
= 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/μs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 10 Ω
T
C
= 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
Maximum Ratings
800
V
800
V
OVERMOLDED TO-220
(IXTP...M) OUTLINE
± 30
V
± 40
V
3.5
A
18
A
4
A
20
mJ
300
mJ
10
V/ns
G _DS
Isolated Tab
G = Gate
S = Source
D = Drain
50
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
3.0
g
Features
z _{Plastic overmolded tab for electrical}
isolation
z _{Fast intrinsic diode}
z _{International standard package}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
Symbol
Test Conditions
(T
J
=
25°C,
unless
otherwise
specified)
BV_DSS
V_GS = 0 V, I_D = 250 μA
V_GS(th)
V_DS = V_GS, I_D = 1 mA
I
GSS
V
GS
=
±30
V,
V
DS
=
0
V
I_DSS
V_DS = V_DSS
V_GS = 0 V
R_DS(on)
V_GS = 10 V, I_D = 3.5 A
Note 1
Characteristic Values
Min. Typ. Max.
800
V
3.0
5.0 V
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
±100 nA
T_J = 125°C
25 μA
500 μA
1.44 Ω
© 2006 IXYS All rights reserved
DS99598E(08/06)