IXFP4N100QM Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFET Q-Class

HiPerFET^TM
Power MOSFET
Q-Class
Advance Technical Information
IXFP4N100QM
V_DSS =
I_D25 =
R_DS(on) ≤
1000V
2.2A
3.0Ω
N-Channel Enhancement Mode
Avalanche Rated, Low Q_g, High dv/dt
Fast Intrinsic Diode
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting Torque
Maximum Ratings
1000
V
1000
V
±20
V
±30
V
2.2
A
16
A
4
A
700
mJ
5
46
- 55 ... +150
150
- 55 ... +150
300
260
1.13 / 10
2.5
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
OVERMOLDED
(IXFP...M) OUTLINE
G
DS
G = Gate
S = Source
D = Drain
Features
Plastic Overmolded Tab for Electrical
Isolation
International Standard Package
Avalanche Rated
Fast Intrinsic Diode
Molding Epoxies meet UL 94 V-0
Flammability Classification
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS(th)
V_GS = 0V, I_D = 1mA
V_DS = V_GS, I_D = 1.5mA
I_GSS
I_DSS
R_DS(on)
V_GS = ±20V, V_DS = 0V
V_DS = V_DSS, V_GS= 0V
V_GS = 10V, I_D = 2A, Note 1
T_J = 125°C
Characteristic Values
Min. Typ. Max.
1000
3.0
V
5.0 V
±100 nA
25 μA
1 mA
3.0 Ω
Advantages
High Power Density
Easy to Mount
Space Savings
© 2009 IXYS CORPORATION, All Rights Reserved
DS100165(06/09)