IXFP4N100PM Datasheet, PDF (1/4 Pages) IXYS Corporation – Polar HiperFET Power MOSFET

Advance Technical Information
Polar^TM HiperFET^TM
Power MOSFET
IXFP4N100PM
V_DSS =
I_D25 =
R_DS(on) ≤
1000V
2.5A
3.3Ω
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J =150°C
T_C = 25°C
1.6 mm (0.062 in.) from Case for 10 s
Plastic Body for 10 s
Mounting Torque
Maximum Ratings
1000
V
1000
V
± 20
V
± 30
V
2.5
A
8.0
A
4.0
A
200
mJ
10
V/ns
57
W
- 55 ... +150
150
- 55 ... +150
300
260
1.13/10
2.5
°C
°C
°C
°C
°C
Nm/lb.in.
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 250μA
I_GSS
V_GS = ±20V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 2A, Note 1
Characteristic Values
Min. Typ. Max.
1000
3.0
V
6.0 V
±100 nA
10 μA
750 μA
3.3 Ω
OVERMOLDED
GDS
G = Gate
S = Source
D = Drain
Features
z _{Plastic Overmolded Tab for Electrical}
Isolation
z _{Avalanche Rated}
z _{Fast Intrinsic Diode}
z _{Low Package Inductance}
Advantages
z _{High Power Density}
z _{Easy to Mount}
z _{Space Savings}
Applications
z _{Switch-Mode and Resonant-Mode}
Power Supplies
z _{DC-DC Converters}
z _{Laser Drivers}
z _{AC and DC Motor Drives}
z _{Robotics and Servo Controls}
© 2010 IXYS CORPORATION, All Rights Reserved
DS100295(11/10)