IXFP3N50PM Datasheet, PDF (1/2 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET

Preliminary Technical Information
PolarHV^TM HiPerFET
Power MOSFET
(Electrically Isolated Tab)
IXFP 3N50PM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
V_DSS = 500 V
I_D25 = 2.7 A
R_DS(on) ≤ 2.0 Ω
t_rr
≤ 200 ns
Symbol
V_DSS
V_DGR
V_GSS
V
GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P
D
T_J
T_JM
T
stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25° C to 150° C
T_J = 25° C to 150° C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25° C
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T_C = 25° C
T_C = 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤150° C, R_G = 50 Ω
T
C
= 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
Maximum Ratings
500
V
500
V
OVERMOLDED TO-220
(IXTP...M) OUTLINE
± 30
V
± 40
V
2.7
A
8
A
3
A
10
mJ
100
mJ
10
V/ns
G _DS
Isolated Tab
G = Gate
S = Source
D = Drain
36
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
4
g
Features
l _{Plastic overmolded tab for electrical}
isolation
l _{Fast intrinsic diode}
l _{International standard package}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
Symbol
Test Conditions
(T
J
=
25°
C,
unless
otherwise
specified)
BV_DSS
V_GS = 0 V, I_D = 250 µA
V_GS(th)
V_DS = V_GS, I_D = 250 µA
I
GSS
V
GS
=
±30
V,
DC
V
DS
=
0
I_DSS
V_DS = V_DSS
V_GS = 0 V
R_DS(on)
V_GS = 10 V, I_D = 1.8 A
Note 1
Characteristic Values
Min. Typ. Max.
500
V
3.0
5.5 V
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
±100 nA
T_J = 125° C
5 µA
200 µA
2.0 Ω
© 2006 IXYS All rights reserved
DS99509E(04/06)