IXFP12N50PM Datasheet, PDF (1/5 Pages) IXYS Corporation – Polar Power MOSFET HiPerFET

Polar^TM Power MOSFET
HiPerFET^TM
(Electrically Isolated Tab)
IXFP12N50PM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J =150°C
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
Maximum Ratings
500
V
500
V
± 30
V
± 40
V
6
A
30
A
12
A
600
mJ
10
V/ns
50
W
- 55 ... +150
°C
150
°C
- 55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
2.5
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS(th)
V_GS = 0V, I_D = 250μA
V_DS = V_GS, I_D = 1mA
I_GSS
V_GS = ±30V, V_DS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0V
R_DS(on)
V_GS = 10V, I_D = 6A, Note 1
T_J = 125°C
Characteristic Values
Min. Typ. Max.
500
V
3.0
5.5 V
±100 nA
5 μA
250 μA
500 mΩ
V_DSS =
I_D25 =
R_DS(on) ≤
t_rr
≤
500V
6A
500mΩ
300ns
OVERMOLDED TO-220
(IXFP...M) OUTLINE
G _DS
Isolated Tab
G = Gate
S = Source
D = Drain
Features
Plastic overmolded tab for electrical
isolation
International standard package
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
© 2008 IXYS CORPORATION, All rights reserved
DS99510F(04/08)