English
Language : 

IXFN90N85X Datasheet, PDF (1/5 Pages) IXYS Corporation – Advance Technical Information
Advance Technical Information
X-Class HiPerFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN90N85X
D
G
S
S
VDSS =
ID25 =
RDS(on) 
850V
90A
41m
miniBLOC, SOT-227
E153432
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
dv/dt
TJ
TJM
Tstg
VISOL
Md
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
TC = 25C
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
TC = 25C
IS  IDM, VDD  VDSS, TJ  150°C
50/60 Hz, RMS t = 1 minute
IISOL  1mA
t = 1 second
Mounting Torque
Terminal Connection Torque
Maximum Ratings
850
V
850
V
 30
V
 40
V
90
A
180
A
45
A
4
J
1200
W
50
V/ns
-55 ... +150
C
150
C
-55 ... +150
C
2500
V~
3000
V~
1.5/13
1.3/11.5
Nm/lb.in
Nm/lb.in
30
g
S
G
G = Gate
S = Source
S
D
D = Drain
Features
 International Standard Package
 miniBLOC, with Aluminium Nitride
Isolation
 Isolation Voltage 2500V~
 High Current Handling Capability
 Fast Intrinsic Diode
 Avalanche Rated
 Low RDS(on)
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS
VGS =  30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 45A, Note 1
Characteristic Values
Min. Typ. Max.
850
V
3.5
5.5 V
200 nA
50 A
5 mA
41 m
Advantages
 High Power Density
 Easy to Mount
 Space Savings
Applications
 Switch-Mode and Resonant-Mode
Power Supplies
 DC-DC Converters
 PFC Circuits
 AC and DC Motor Drives
 Robotics and Servo Controls
© 2016 IXYS CORPORATION, All Rights Reserved
DS100723(5/16)