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IXFN90N30 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs Single Die MOSFET
Advanced Technical Information
HiPerFETTM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Symbol
V
DSS
V
DGR
VGS
V
GSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
T
JM
T
stg
T
J
VISOL
Md
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MW
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
I
S
£
I,
DM
di/dt
£
100
A/ms,
V
DD
£
V,
DSS
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.63 in) from case for 10 s
50/60 Hz, RMS t = 1 min
IISOL £ 1 mA
t=1s
Mounting torque
Terminal connection torque
IXFN90N30
D
G
VDSS = 300 V
ID25 = 90 A
= RDS(on) 33 mW
trr £ 250 ns
S
S
Maximum Ratings
300
V
300
V
±20
V
±30
V
90
A
360
A
90
A
64
mJ
3
J
5 V/ns
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
560
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
-
°C
2500
V~
3000
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Features
• International standard package
• miniBLOC, with Aluminium nitride
isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Symbol
V
DSS
V
GH(th)
IGSS
IDSS
RDS(on)
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
V = 0 V, I = 3 mA
300
GS
D
V = V , I = 8 mA
2
DS
GS D
VGS = ±20 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
V
4V
±100 nA
100 mA
2 mA
33 mW
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
Advantages
• Easy to mount
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98540 (9/98)
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