IXFN82N60P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET

PolarHV^TM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN 82N60P
V
DSS
I
D25
R_DS(on)
t_rr
= 600 V
= 82 A
≤ 75 mΩ
≤ 200 ns
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_AR
E_AR
E
AS
dv/dt
P_D
T
J
T_JM
T_stg
T_L
V_ISOL
M_d
Weight
Test Conditions
T_J = 25° C to 150° C
T_J = 25° C to 150° C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25° C
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T_C = 25° C
T
C
= 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤150° C, R_G = 2 Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
600
V
600
V
±30
V
±40
V
72
A
200
A
82
A
100
mJ
5
J
20
V/ns
1040
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
50/60 Hz, RMS,
I
ISOL
≤1
mA,
T = 1 min
T=1s
Mounting torque, Terminal connection torque
2500
3000
1.5/13
30
V~
V~
lb.in.
g
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 3 mA
V
GS(th)
V = V , I = 8 mA
DS
GS D
I_GSS
V_GS = ±30 V_DC, V_DS = 0
I_DSS
V_DS = V_DSS
V_GS = 0 V
R_DS(on)
V_GS = 10 V, I_D = I_T, Note 1
Characteristic Values
Min. Typ. Max.
600
V
3.0
5.0 V
±200 nA
T_J = 125° C
25 µA
1000 µA
75 m Ω
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
G = Gate
S = Source
S
D
D = Drain
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
• International standard package
• Encapsulating epoxy meets
UL 94 V-0, flammability classification
• miniBLOC with Aluminium nitride
isolation
• Low R_{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount
• Space savings
• High power density
© 2006 IXYS All rights reserved
DS99559E(01/06)