IXFN80N50Q2 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFET Q2-Class

Preliminary Technical Information
HiPerFET^TM
Power MOSFET
Q2-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Q_g, Low
Intrinsic R_g, High dV/dt, Low t_rr
IXFN80N50Q2
V_DSS =
I_D25 =
≤ R_DS(on)
t_rr
≤
500V
80A
60mΩ
250ns
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T
L
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
1.6mm (0.062 in.) from case for 10s
50/60Hz, RMS
I_ISOL ≤ 1mA
t = 1min
t = 1s
Mounting torque
Terminal connection torque
Maximum Ratings
500
V
500
V
±30
V
±40
V
80
A
320
A
80
A
5
J
20
V/ns
890
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
2500
3000
1.5/13
1.3/ 11.5
V~
V~
Nm/lb.in.
Nm/lb.in.
30
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = 1mA
V_GS(th)
V_DS = V_GS, I_D = 8mA
I_GSS
V_GS = ±30V, V_DS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
500
V
3.0
5.5
V
±200 nA
100 μA
5 mA
60 mΩ
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
z _{Double metal process for low}
gate resistance
z _{miniBLOC, with Aluminium nitride}
isolation
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
z _{Fast intrinsic Rectifier}
Applications
z _{DC-DC converters}
z _{Switched-mode and resonant-mode}
power supplies
z _{DC choppers}
z _{Pulse generators}
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
© 2008 IXYS Corporation, All rights reserved
DS99031B(05/08)