IXFN80N50P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET

PolarHV^TM HiPerFET ^{IXFN 80N50P}
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
V_DSS
I_D25
R_DS(on)
t_rr
= 500 V
= 66 A
≤ 65 mΩ
≤ 200 ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T
J
T_JM
T_stg
T_L
V_ISOL
M_d
Weight
Test Conditions
T_J = 25° C to 150° C
T_J = 25° C to 150° C; R_GS = 1 MΩ
Transient
Continuous
T_C = 25° C
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T_C = 25° C
T_C = 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤150° C, R_G = 2 Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz; I_ISOL ≤1 mA
Mounting torque
Terminal connection torque (M4)
Maximum Ratings
500
V
500
V
± 40
V
± 30
V
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
66
A
200
A
80
A
80
mJ
3.0
J
10
V/ns
G = Gate
S = Source
S
D
D = Drain
700
-55 ... +150
150
-55 ... +150
Either source tab S can be used forsource
W ^{current or Kelvin gate return.}
°C
°C
°C
300
°C
2500
V~
1.5/13 Nm/ib.in.
1.5/13 Nm/ib.in.
30
g
Features
l _{Fast intrinsic diode}
l _{International standard package}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{UL recognized.}
l _{Isolated mounting base}
Symbol
Test Conditions
(T
J
=
25°
C
unless
otherwise
specified)
BV_DSS
V_GS = 0 V, I_D = 500 µA
V_GS(th)
V_DS = V_GS, I_D = 8 mA
I
GSS
V
GS
=
±
30
V,
DC
V
DS
=
0
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 125° C
R
DS(on)
V = 10 V, I = 0.5 I , Note 1
GS
D
D25
Characteristic Values
Min. Typ. Max.
500
V
3.0
5.0 V
± 200 nA
25 µA
1 mA
65 mΩ
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2006 IXYS All rights reserved
DS99477E(01/06)