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| IXFN72N55Q2 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFET | |||
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HiPerFETTM
Power MOSFET
IXFN 72N55Q2
N-Channel Enhancement Mode
Avalanche Rated,
High dV/dt, Low trr
Low
Qg,
Low
Intrinsic
Rg
Preliminary Data Sheet
VDSS = 550 V
ID25 = 72 A
RDS(on)= 72 mâ¦
trr ⤠250 ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
VISOL
Md
Weight
Symbol
VDSS
V GS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TTJJ
= 25°C to 150°C
= 25°C to 150°C; RGS = 1 Mâ¦
Continuous
Transient
TC = 25°C
TTCC
=
=
25°C,
25°C
pulse
width
limited
by
TJM
TTCC
= 25°C
= 25°C
ITSJ
â¤
â¤
I1D5M0, °dCi/d, tRâ¤G
100
=2
A/µs,
â¦
VDD
â¤
VDSS
TC = 25°C
50/60 Hz, RMS, t = 1 minute
Mounting torque
Terminal connection torque
Maximum Ratings
550
V
550
V
±30
V
±40
V
72
A
288
A
72
A
60
mJ
5.0
J
20 V/ns
890
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
2500
V
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Test Conditions
VGS = 0 V, ID = 1mA
VDS = VGS, ID = 8mA
VGS = ±30 V, VDS = 0
VDS = VDSS
VGS = 0 V
VNGoSt=e
10
1
V,
ID
=
0.5
â¢
ID25
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
550
V
2.5
5.0 V
±200 nA
TJ = 25°C
TJ = 125°C
100 µA
5 mA
72 mâ¦
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
â¢Double metal process for low
gate resistance
â¢miniBLOC, with Aluminium nitride
isolation
â¢Unclamped Inductive Switching (UIS)
rated
â¢Low package inductance
â¢Fast intrinsic Rectifier
Applications
⢠DC-DC converters
⢠Switched-mode and resonant-mode
power supplies
⢠DC choppers
⢠Pulse generators
Advantages
⢠Easy to mount
⢠Space savings
⢠High power density
© 2003 IXYS All rights reserved
DS99030B(10/03)
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