IXFN64N60P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET

PolarHV^TM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN 64N60P
V=
DSS
I_D25 =
≤ R_DS(on)
t_rr
≤
600
50
96
200
V
A
mΩ
ns
Symbol
Test Conditions
Maximum Ratings
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
V_DSS
V_DGR
V
GSS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
V_ISOL
M_d
Weight
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤I_DM, di/dt £ 100 A/µs, V_DD ≤V_DSS,
T_J ≤150°C, R_G = 2 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, 1 minute
Mounting torque
Terminal torque
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 3 mA
V
GS(th)
V = V , I = 8 mA
DS
GS D
I_GSS
V_GS = ±30 V_DC, V_DS = 0
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 125° C
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25, Note 1
600
V
600
V
± 30
V
± 40
V
50
A
150
A
64
A
80
mJ
3.5
J
20
V/ns
700
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
2500
V~
1.13/10 Nm/lb.in.
1.13/10 Nm/lb.in.
30
g
Characteristic Values
Min. Typ. Max.
600
V
3.0
5.0 V
±200 nA
25 µA
1000 µA
96 m Ω
S
D
G = Gate
S = Source
D = Drain
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
• International standard package
• Encapsulating epoxy meets
UL 94 V-0, flammability classification
• miniBLOC with Aluminium nitride
isolation
• Low R_{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount
• Space savings
• High power density
© 2006 IXYS All rights reserved
DS99443E(01/06)