IXFN64N50P_09 Datasheet, PDF (1/4 Pages) IXYS Corporation – Polar Power MOSFET HiPerFET

Polar^TM Power MOSFET
HiPerFET^TM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN64N50P
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
1.6mm (0.062 in.) from Case for 10s
50/60 Hz, RMS
I_ISOL ≤ 1mA
Mounting Torque
Terminal Connection Torque
t = 1min
t = 1s
Maximum Ratings
500
V
500
V
±30
V
± 40
V
50
A
150
A
64
A
2.5
J
20
V/ns
625
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
2500
3000
1.5/13
1.3/11.5
V~
V~
Nm/lb.in.
Nm/lb.in.
30
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 250μA
V_GS(th)
V_DS = V_GS, I_D = 8mA
I_GSS
V_GS = ±30V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS= 0V
T_J = 125°
R_DS(on)
V_GS = 10V, I_D = 32A, Note 1
Characteristic Values
Min. Typ. Max.
500
V
3.0
5.5 V
±200 nA
25 μA
1 mA
85 mΩ
V_DSS = 500V
I_D25 = 50A
≤ R_DS(on) 85mΩ
t_rr
≤ 200ns
miniBLOC, SOT-227 B
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
z _{International Standard Package}
z _{miniBLOC, with Aluminium Nitride}
Isolation
z _{Isolation Voltage 2500 V~}
z _{Fast Intrinsic Diode}
z _{Avalanche Rated}
z _{Low RDS(on)}
Advantages
z _{Low Gate Drive Requirement}
z _{High Power Density}
Applications:
z _{Switched-Mode and Resonant-Mode}
Power Supplies
z _{DC-DC Converters}
z _{Laser Drivers}
z _{AC and DC Motor Drives}
z _{Robotics and Servo Controls}
© 2009 IXYS CORPORATION, All Rights Reserved
DS99349F(05/09)