IXFN64N50PD2 Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET

PolarHV^TM HiPerFET
Power MOSFET
IXFN64N50PD2
IXFN64N50PD3
Boost & Buck Configurations
(Ultra-fast FRED Diode)
3
3
4
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
2
D2 1
2
4
D3 ¹
V_DSS = 500V
I_D25 = 50A
R_DS(on) ≤ 85mΩ
t_rr ≤ 200ns
miniBLOC, SOT-227 B
E153432
1
2
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤150°C
T_C = 25°C
Mounting Torque
Terminal Connection Torque
Maximum Ratings
500
V
500
V
± 30
V
± 40
V
50
A
200
A
64
A
2.5
J
10
V/ns
625
W
-55 ... +150
150
-55 ... +150
1.5/13
1.3/11.5
30
°C
°C
°C
Nm/lb.in.
Nm/lb.in.
g
Symbol Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 500μA
V_GS(th)
V_DS = V_GS, I_D = 8mA
I_GSS
V_GS = ± 30V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS= 0V
R_DS(on)
V_GS = 10V, I_D = 32A, Note 1
T_J = 125°C
Characteristic Values
Min. Typ. Max.
500
V
3.0
5.5 V
± 200 nA
50 μA
1 mA
85 mΩ
4
3
D2 Pin Out:
1 = Source
2 = Gate
3 = Drain / Diode anode
4 = Diode cathode
D3 Pin Out:
1 = Source / Diode Cathode 2 = Gate
3 = Drain
4 = Diode cathode
Features
z _{Fast Intrinsic Diode in Boost}
Configuration
z _{International Standard Package}
z _{Encapsulating Epoxy Meets}
UL 94 V-0, Flammability Classification
z _{miniBLOC with Aluminium Nitride}
Isolation
z _{Avalanche Rated}
z _{Low Package Inductance}
Advantages
z _{Easy To Mount}
z _{Space Savings}
z _{Tightly Coupled FRED Diode}
z _{High Power Density}
Applications
z _{PFC Circuits}
z _{Uninterruptible Power Supplies (UPS)}
z _{Switched-Mode and Resonant-Mode}
Power Supplies
z _{AC and DC Motor Drives}
z _{High Speed Power Switching}
Applications
z _{Robotics and Servo Controls}
© 2009 IXYS CORPORATION, All Rights Reserved
DS99507F(4/09)