IXFN64N50P Datasheet, PDF (1/2 Pages) IXYS Corporation – PolarHVTM HiPerFETPower MOSFET

PolarHV^TM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Preliminary Data Sheet
IXFN 64N50P
V
= 500 V
DSS
I_D25 = 64 A
≤ R_DS(on) 85 mΩ
t_rr
≤ 250 ns
Symbol
Test Conditions
Maximum Ratings
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I
DM
I
AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
M_d
V
ISOL
M
d
Weight
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T
C
=
25°C,
pulse
width
limited
by
T
JM
T
C
= 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 4 Ω
T_C = 25°C
Mounting torque
50/60 Hz
t = 1 min
I_ISOL ≤ 1 mA
Mounting torque
t=1s
Terminal connection torque (M4)
SOT-227B
500
V
500
V miniBLOC, SOT-227 B (IXFN)
E153432
±30
V
S
±40
V
G
64
A
150
A
64
A
S
70
mJ
G = Gate
D
D = Drain
2.0
J S = Source
20
V/ns ^{Either Source terminal S can be used as the}
Source terminal or the Kelvin Source (gate
return) terminal.
700
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
2500
V~
3000
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Features
z _{International standard packages}
z _{Fast recovery diode}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
Advantages
Symbol
Test Conditions
(T
J
=
25°C,
unless
otherwise
specified)
V
DSS
V
GS
=
0
V,
I
D
=
250
µA
Characteristic Values
Min. Typ. Max.
500
V
V_GS(th)
V_DS = V_GS, I_D = 8 mA
2.5
5.0 V
I_GSS
V_GS = ±30 V_DC, V_DS = 0
±100 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 125°C
25 µA
250 µA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
85 m Ω
z _{Easy to mount}
z _{Space savings}
z _{High power density}
© 2005 IXYS All rights reserved
DS99349(02/05)