IXFN60N80P Datasheet, PDF (1/4 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET

PolarHV^TM HiPerFET ^{IXFN 60N80P}
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
V = 800 V
DSS
I = 53 A
D25
≤ R_DS(on) 140 mΩ
t_rr ≤ 250 ns
Symbol
V
DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_AR
E
AR
E_AS
dv/dt
P_D
T_J
T
JM
T_stg
T_L
V_ISOL
M_d
Weight
Test Conditions
T
J
= 25° C to 150° C
T_J = 25° C to 150° C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25° C
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T
C
= 25° C
T_C = 25° C
I
S
≤
I,
DM
di/dt
≤ 100
A/µs,
V
DD
≤
V,
DSS
T
J
≤150° C,
R
G
=
2
Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS
t = 1 min
I_ISOL ≤1 mA
t=1s
Mounting torque
Terminal connection torque
Maximum Ratings
800
V
800
V
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
±30
V
±40
V
53
A
250
A
S
D
30
A _{G = Gate}
D = Drain
100
mJ ^{S = Source}
5
J Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
20
V/ns ^{return) terminal.}
1040
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
2500
V~
3000
V~
1.5 / 13 Nm/lb.in.
1.5 / 13 Nm/lb.in.
30
g
Features
• International standard package
• Encapsulating epoxy meets
UL 94 V-0, flammability classification
• miniBLOC with Aluminium nitride
isolation
l _{Fast recovery diode}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 3 mA
V
GS(th)
V = V , I = 8 mA
DS
GS D
I_GSS
V_GS = ±30 V_DC, V_DS = 0
I_DSS
V_DS = V_DSS
V_GS = 0 V
R_DS(on)
V_GS = 10 V, I_D = I_T, Note 1
Characteristic Values
Min. Typ. Max.
800
V
3.0
5.0 V
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
±200 nA
T_J = 125° C
25 µA
3000 µA
140 m Ω
© 2006 IXYS All rights reserved
DS99562E(02/06)