IXFN58N50 Datasheet, PDF (1/2 Pages) IXYS Corporation – High Current Power MOSFET

Preliminary Data Sheet
High Current Power MOSFET
N-Channel Enhancement Mode
IXFN 58N50
IXFN 61N50
V_DSS
I_D25
R_DS(on)
IXFN 58N50 500V 58A 85 mΩ
IXFN 61N50 500V 61A 75 mΩ
Symbol
V_DSS
V
DGR
V
GS
V_GSM
I
D25
I_DM
P
D
T
J
T_JM
T_stg
V_ISOL
M_d
Weight
E
AR
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
Maximum Ratings
T_J = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1.0
MΩ
500
V
500
V
Continuous
Transient
±20
V
±30
V
T = 25°C
C
T_C = 25°C (1)
IXFN 58N50
58
A
IXFN 61N50
61
A
IXFN 58N50 232
A
IXFN 61N50 244
A
T = 25°C
C
625
W
-40 ... +150
°C
150
°C
-40 ... +150
°C
50/60 Hz, RMS
t = 1 minute
t = 1s
2500
V~
3000
V~
Mounting torque
Terminal connection torque (M4)
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
75
mJ
Test Conditions
V_GS = 0 V, I_D = 5 mA
Characteristic Values
(T_J = 25°C unless otherwise specified)
Min. Typ.
Max.
500
V
V_DS = V_GS, I_D = 12 mA
1.7
4.0
V
V_GS = ±20 V DC, V_DS = 0
±200 nA
V_DS = 0.8 V_DSS
V =0V
GS
T_J = 25°C
T = 125°C
J
V_GS = 10 V, I_D = 0.5 I_D25
58N50
61N50
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
500 µA
2 mA
85 mΩ
75 mΩ
miniBLOC, SOT-227 B
1
2
1 = Source
3 = Drain
4
3
2 = Gate
4 = Source
Features
• International standard package
• Isolation voltage 3000V (RMS)
• Low R_{DS (on)} HDMOS^TM process^l
• Rugged polysilicon gate cell structure
• Low drain-to-case capacitance
(<60 pF)
- reduced RFI
• Low package inductance (< 10 nH)
- easy to drive and to protect
• Aluminium Nitride Isolation
- increased current ratings
Applications
• DC choppers
• AC motor speed controls
• DC servo and robot drives
• Uninterruptible power supplies (UPS)
• Switched mode and resonant mode
power supplies
Advantages
• Easy to mount
• Space savings
• High power density
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IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: [phone] Fax: [phone]
92810G (10/95)
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: [phone] Fax: [phone]