IXFN55N50F Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerRF Power MOSFETs

Advance Technical Information
HiPerRF^TM
IXFN 55N50F
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated, Low Q_g, Low Intrinsic R_g
High dV/dt, Low t_rr
Symbol
Test Conditions
D
G
S
S
Maximum Ratings
V
DSS
V
DGR
V_GS
V_GSM
I
D25
I_DM
I_AR
E_AR
E
AS
dv/dt
P_D
T_J
T_JM
T_stg
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
500
V
500
V
±20
V
±30
V
55
A
220
A
55
A
60
mJ
3.0
J
5 V/ns
600
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
T_J
V_ISOL
M_d
Weight
1.6 mm (0.63 in) from case for 10 s
50/60 Hz, RMS t = 1 min
I_ISOL ≤ 1 mA
t=1s
Mounting torque
Terminal connection torque
-
°C
2500
V~
3000
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Symbol
V
DSS
V
GH(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 0 V, I_D = 1 mA
500
V_DS = V_GS, I_D = 8 mA
3.0
V_GS = ±20 V_DC, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
V
5.5 V
±200 nA
100 µA
3 mA
85 mΩ
V=
DSS
I_D25 =
= R_DS(on)
500 V
55 A
85 mΩ
t_rr ≤ 250 ns
miniBLOC, SOT-227 B
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
l _{RF capable Mosfets}
l _{Ruggedpolysilicongatecellstructure}
l _{Double metal process for low gate}
resistance
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
l _{Fast intrinsicrectifier}
Applications
l _{DC-DC converters}
l _{Switched-mode and resonant-mode}
power supplies, >500kHz switching
l _{DC choppers}
l _{Pulsegeneration}
l _Laserdrivers
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2001 IXYS All rights reserved
98854 (8/01)