IXFN55N50 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFET

HiPerFET^TM
Power MOSFET
Single Die MOSFET
Preliminary data sheet
IXFN 55N50
IXFN 50N50
IXFK 55N50
IXFK 50N50
V_DSS
500V
500V
500V
500V
I_D25
R_DS(on)
t_rr
55A 80mΩ 250ns
50A 100mΩ 250ns
55A 80mΩ 250ns
50A 100mΩ 250ns
Symbol
Test Conditions
IXFK
55N50
Maximum Ratings
IXFK
IXFN
50N50 55N50
IXFN
50N50
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
dv/dt
P_D
T_J
T_JM
T_stg
T_L
V_ISOL
M_d
T_J = 25°C to 150°C
500
T_J = 25°C to 150°C
500
Continuous
±20
Transient
±30
500
V
500
V
±20
V
±30
V
T_C = 25°C
T_C =25°C,
T_C = 25°C
55
50
55
220
200
220
55
50
55
T_C = 25°C
60
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS 5
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
560
-55 ... +150
150
-55 ... +150
50 A
200 A
50 A
60 mJ
5 V/ns
600
W
°C
°C
°C
1.6 mm (0.063 in) from case for 10 s
300
N/A
°C
50/60 Hz, RMS
I_ISOL ≤ 1 mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque
N/A
N/A
0.9/6
N/A
2500
V~
3000
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
10
30
g
Symbol Test Conditions
(T_J = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
V_DSS
V_GS = 0 V, I_D = 1mA
500
V
V_GS(th)
V_DS = V_GS, I_D = 8mA
2.5
4.5 V
I_GSS
I_DSS
R_DS(on)
V_GS = ±20V; V_DS = 0V
V_DS = V_DSS
V_GS = 0 V
V_GS = 10 V, I_D = 0.5 • I_D25
Note 1
T_J = 25°C
T_J = 125°C
55N50
50N50
±200 nA
25 µA
2 mA
80 mΩ
100 mΩ
TO-264 AA (IXFK)
G
D
S
D (TAB)
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
D = Drain
S = Source
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• International standard packages
• Encapsulating epoxy meets
UL 94 V-0, flammability classification
• miniBLOC with Aluminium nitride
isolation
• Low R_{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
Advantages
• Easy to mount
• Space savings
• High power density
© 2002 IXYS All rights reserved
97502F (04/02)