IXFN50N80Q2 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFETs Q-Class

HiPerFET^TM
Power MOSFETs
Q-Class
IXFN50N80Q2
N-Channel Enhancement Mode
Avalanche Rated, Low Q_g, Low Intrinsic R_G
High dV/dt, Low t_rr
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, RMS t = 1 minute
I_ISOL ≤ 1mA
t = 1 second
Mounting Torque
Terminal Connection Torque
Maximum Ratings
800
V
800
V
±30
V
±40
V
50
A
200
A
50
A
5
J
20
V/ns
1135
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
2500
V~
3000
V~
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
30
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 1mA
V_GS(th)
V_DS = V_GS, I_D = 8mA
I_GSS
V_GS = ±30V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min.
Typ. Max.
800
V
3.0
5.5 V
±200 nA
50 μA
3 mA
160 mΩ
V_DSS =
I_D25
=
R_DS(on) ≤
t_rr
≤
800V
50A
160mΩ
300ns
miniBLOC, SOT-227
E153432
S
G
G = Gate
S = Source
S
D
D = Drain
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
Features
z _{International Standard Package}
z _{miniBLOC, with Aluminium Nitride}
Isolation
z _{Isolation Voltage 2500 V~}
z _{High Current Handling Capability}
z _{Fast Intrinsic Rectifier}
z _{Avalanche Rated}
z _{Low RDS(on)}
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
Applications
z _{Switch-Mode and Resonant-Mode}
Power Supplies >500kHz Switching
z _{DC-DC Converters}
z _{DC Choppers}
z _{Pulse Generation}
z _{Laser Drivers}
© 2010 IXYS CORPORATION, All Rights Reserved
DS99028C(01/10)