IXFN48N60P Datasheet, PDF (1/4 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET

PolarHV^TM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN 48N60P
V = 600 V
DSS
I_D25 = 40 A
≤ R_DS(on) 140 mΩ
t_rr ≤ 200 ns
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I
DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T
JM
T_stg
T_L
V
ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T
C
=
25°C,
pulse
width
limited
by
T
JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I
S
≤
I,
DM
di/dt
≤
100
A/μs,
V
DD
≤
V,
DSS
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS
t = 1 min
I
ISOL
≤
1
mA
t=1s
Mounting torque
Terminal connection torque
Maximum Ratings
600
V
miniBLOC, SOT-227 B (IXFN)
600
V
E153432
±30
V
±40
V
S
G
40
A
110
A
48
A
S
D
70
mJ
G = Gate
D = Drain
2.0
J _{S = Source}
10
V/ns _{Either Source terminal S can be used as the}
Source terminal or the Kelvin Source (gate
return) terminal.
625
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
2500
V~
3000
V~
1.5 / 13 Nm/lb.in.
1.5 / 13 Nm/lb.in.
30
g
Features
• International standard package
• Encapsulating epoxy meets
UL 94 V-0, flammability classification
• miniBLOC with Aluminium nitride
isolation
z _{Fast recovery diode}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 250 μA
Characteristic Values
Min. Typ. Max.
600
V
V_GS(th)
V_DS = V_GS, I_D = 8 mA
3.0
5.5 V
I_GSS
V_GS = ±30 V_DC, V_DS = 0
±200 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 125°C
25 μA
1000 μA
R_DS(on)
V_GS = 10 V, I_D = 4 A
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
140 mΩ
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
© 2006 IXYS All rights reserved
DS99337E(03/06)