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IXFN48N55 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs Single Die MOSFET
Advanced Technical Information
HiPerFETTM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Symbol
VDSS
VDGR
V
GS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TJ
V
ISOL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
T
J
£
150°C,
R
G
=
2
W
TC = 25°C
1.6 mm (0.63 in) from case for 10 s
50/60 Hz, RMS t = 1 min
IISOL £ 1 mA
t=1s
Mounting torque
Terminal connection torque
IXFN 48N55
D
G
S
S
Maximum Ratings
550
V
550
V
±20
V
±30
V
48
A
192
A
44
A
60
mJ
3
J
5 V/ns
600
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
-
°C
2500
V~
3000
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Symbol
VDSS
VGH(th)
I
GSS
IDSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 3 mA
550
VDS = VGS, ID = 8 mA
2.5
V
GS
=
±20
V,
DC
V
DS
=
0
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
V
4.5 V
±100 nA
100 mA
2 mA
110 mW
VDSS =
ID25 =
= RDS(on)
550 V
48 A
110 mW
trr £ 250 ns
miniBLOC, SOT-227 B
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• International standard package
• miniBLOC, with Aluminium nitride
isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
Advantages
• Easy to mount
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98711 (03/24/00)
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