IXFN44N80P Datasheet, PDF (1/4 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET

PolarHV^TM HiPerFET ^{IXFN 44N80P}
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
V_DSS =
I_D25 =
R_DS(on) ≤
t_rr
≤
800
39
190
250
V
A
mΩ
ns
Symbol
V_DSS
V_DGR
V_GS
V
GSM
I
D25
I_DM
I_AR
E
AR
E_AS
dv/dt
P
D
T_J
T_JM
T
stg
T_L
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T
C
= 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T
C
= 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/μs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 10 Ω
T
C
= 25°C
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, 1 minute
I_ISOL < 1 mA, 10 seconds
Mounting torque
Terminal torque
Maximum Ratings
800
V
800
V
± 30
V
± 40
V
39
A
100
A
22
A
80
mJ
3.4
J
10
V/ns
694
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
2500
V~
3000
V~
1.13/10 Nm/lb.in.
1.13/10 Nm/lb.in.
30
g
Symbol
Test Conditions
(T_J = 25°C unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 800 μA
Characteristic Values
Min. Typ. Max.
800
V
V_GS(th)
V_DS = V_GS, I_D = 8 mA
3.0
5.0 V
I
GSS
V
GS
=
±
30
V,
V
DS
=
0
V
± 200 nA
I_DSS
R
DS(on)
V_DS = V_DSS
V_GS = 0 V
T_J = 125°C
V = 10 V, I = 0.5 I , Note 1
GS
D
TD25
50 μA
1.5 mA
190 mΩ
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
G = Gate
S = Source
S
D
D = Drain
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
• International standard package
• Encapsulating epoxy meets
UL 94 V-0, flammability classification
• miniBLOC with Aluminium nitride
isolation
• Low R_{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount
• Space savings
• High power density
© 2006 IXYS All rights reserved
DS99503E(06/06)