IXFN44N80 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFETTM Power MOSFETs Single MOSFET Die

HiPerFET^TM
Power MOSFETs
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t_rr
Symbol
V_DSS
V_DGR
V_GS
V
GSM
I_D25
I_DM
I_AR
E
AR
E_AS
dv/dt
P_D
T
J
T
JM
T
stg
V_ISOL
M
d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MW
Continuous
Transient
T_C = 25°C, Chip capability
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T
C
= 25°C
T_C = 25°C
I_S £ I_DM, di/dt £ 100 A/ms, V_DD £ V_DSS,
T_J £ 150°C, R_G = 2 W
T_C = 25°C
50/60 Hz, RMS t = 1 min
I_ISOL £ 1 mA
t=1s
Mounting torque
Terminal connection torque
IXFN 44N80
D
V_DSS = 800 V
I_D25 =
44 A
R_DS(on) = 0.165 W
G
S
S
Maximum Ratings
800
V
800
V
±20
V
±30
V
44
A
176
A
44
A
64
mJ
4
J
5 V/ns
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
700
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
2500
V~
3000
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Features
• Internationalstandardpackages
• miniBLOC, with Aluminium nitride
isolation
• Low R
HDMOS^TM process
DS (on)
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• FastintrinsicRectifier
Symbol
V_DSS
V_GH(th)
I_GSS
I_DSS
R
DS(on)
Test Conditions
V_GS = 0 V, I_D = 3 mA
V_DS = V_GS, I_D = 8 mA
V_GS = ±20 V_DC, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
V = 10 V, I = 0.5 • I
GS
D
D25
Pulse test, t £ 300 ms,
duty cycle d £ 2 %
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
800
2.0
T_J = 25°C
T_J = 125°C
V
4.0 V
±200 nA
100 mA
2 mA
0.165 W
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
Advantages
• Easy to mount
• Space savings
• High power density
© 2001 IXYS All rights reserved
98594B (02/01)