IXFN44N50U2 Datasheet, PDF (1/5 Pages) IXYS Corporation – HiPerFET Power MOSFETs

HiPerFET^TM
Power MOSFETs
V_DSS
IXFN44N50U2 IXFN44N50U3 500 V
IXFN48N50U2 IXFN48N50U3 500 V
I_{D (cont)}
44 A
48 A
R_DS(on)
0.12 W
0.10 W
t_rr
35 ns
35 ns
Buck & Boost Configurations for
3
3
PFC & Motor Control Circuits
4
Preliminary data
Symbol
Test Conditions
V_DSS
V_DGR
V
GS
V_GSM
I_D25
I
DM
I
AR
E
AR
dv/dt
P_D
V_RRM
I
FAVM
I
FRM
P
D
T_J
T_JM
T_stg
V_ISOL
M
d
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MW
Continuous
Transient
T_C = 25°C
T
C
=
25°C,
pulse width limited by max. T_JM
T
C
=
25°C
Repetitive
44N50
48N50
44N50
48N50
I_S £ I_DM, -di/dt £ 100 A/ms, V_DD £ V_DSS,
T_J £ 150°C, R_G = 2 W
T_C = 25°C
T
C
=
70°C;
rectangular,
d
=
0.5
tp
<10
ms;
pulse
width
limited
by
T
J
T
C
=
25°C
50/60 Hz, RMS
I_ISOL £ 1 mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque (M4)
Weight
2
2
4
1
1
Maximum Ratings ^{miniBLOC, SOT-227 B}
500
500
±20
±30
44
48
176
192
24
30
5
520
600
60
800
180
-40 ... +150
150
-40 ... +150
2500
3000
V
V
V
V
A
A
A
A
A
mJ
V/ns
W
V
A
A
W
°C
°C
°C
V~
V~
1
2
4
3
Features
· Popular Buck & Boost circuit
topologies
· International standard package
miniBLOC SOT-227B
· Aluminium nitride isolation
- high power dissipation
· Isolation voltage 3000 V~
·
Low
R
DS
(on)
HDMOS^TM
process
· Rugged polysilicon gate cell structure
· Low drain-to-case capacitance
(<60 pF)
- reduced RFI
· Ultra-fast FRED diode with soft
reverse recovery
Applications
· Power factor controls and buck
regulators
· DC servo and robotic drives
· DC choppers
· Switch reluctance motor controls
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Advantages
· Easy to mount with 2 screws
· Space savings
· Tightly coupled FRED
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
96535B (7/00)
1-5