IXFN43N60 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFET

ADVANCE INFORMATION
HiPerFET^TM
Power MOSFET
Single MOSFET Die
IXFN 43N60
IXFN 40N60
IXFK 43N60
IXFK 40N60
V_DSS
I_D25
600V 43A
600V 40A
600V 43A
600V 40A
R_DS(on)
t_rr
0.13W
0.15W
0.13W
0.15W
200ns
200ns
200ns
200ns
Symbol
Test Conditions
Maximum Ratings
IXFK IXFK IXFN IXFN
43N60 40N60 43N60 40N60
V_DSS
T_J = 25°C to 150°C
V_DGR T_J = 25°C to 150°C
600
600
V
600
600
V
V
GS
V_GSM
I_D25
I_DM‚
I_AR
E_AR
dv/dt
P_D
T_J
T_JM
T_stg
T_L
V_ISOL
M_d
Continuous
Transient
±20
±20
V
±30
±30
V
T_C = 25°C
T
C
= 25°C
T_C = 25°C
43
40
172 160
43
40
43
40
172 160
43
40
T_C = 25°C
60
60
I
S
£
I,
DM
di/dt
£
100
A/ms,
V
DD
£
V
DSS
5
5
T_J £ 150°C, R_G = 2 W
T_C = 25°C
560
600
-55 ... +150
150
-55 ... +150
A
A
A
mJ
V/ns
W
°C
°C
°C
1.6 mm (0.063 in) from case for 10 s
300
N/A
°C
50/60 Hz, RMS
I_ISOL £ 1 mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque
N/A
N/A
0.9/6
N/A
2500
V~
3000
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
10
30
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
V
DSS
V_GH(th)
V = 0 V, I = 3mA
GS
D
V_DS = V_GS, I_D = 8mA
I_GSS
V_GS= ±20 V_GE = 0
I_DSS
V_DS= 0.8 • V_DSS V
V_GS= 0 V
R_DS(on)
V_GS= 10 V, I_D = 0.5 • I_D25
Pulse test, t £ 300 ms,
duty cycle d £ 2 %
T_J = 25 °C
T_J = 125 °C
43N60
40N60
Characteristic Values
Min. Max.
600
V
2
4V
±200 nA
400 mA
2 mA
0.13 W
0.15 W
TO-264 AA (IXFK)
G
D
S
D (TAB)
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
D = Drain
S = Source
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
· International standard packages
· Encapsulating epoxy meets
UL94V-0, flammability classification
· miniBLOC with Aluminium nitride
isolation
· Low R_{DS (on)} HDMOS^TM process
· Rugged polysilicon gate cell structure
· Unclamped Inductive Switching (UIS)
rated
· Low package inductance
· Fast intrinsic Rectifier
Applications
· DC-DC converters
· Synchronous rectification
· Battery chargers
· Switched-mode and resonant-mode
power supplies
· DC choppers
· Temperature and lighting controls
· Low voltage relays
Advantages
· Easy to mount
· Space savings
· High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
97503 A(7/97)
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