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| IXFN38N100Q2_08 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFET | |||
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HiPerFETTM
Power MOSFET
IXFN38N100Q2
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic Rg
High dV/dt, Low trr
VDSS = 1000V
ID25 = 38A
RDS(on) ⤠250mΩ
trr
⤠300ns
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
VISOL
Md
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ⤠IDM, VDD ⤠VDSS , TJ ⤠150°C
TC = 25°C
50/60 Hz, RMS, t = 1 minute
Mounting torque
Terminal connection torque
Maximum Ratings
1000
1000
±30
±40
38
152
38
60
5
20
V
V
V
V
A
A
A
mJ
J
V/ns
890
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
2500
V
1.5/13 Nm/lb.in.
1.5/11.5 Nm/lb.in.
30
g
Test Conditions
VGS = 0V, ID = 1mA
VDS = VGS, ID = 8mA
VGS = ±30V, VDS = 0V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
1000
V
3.0
5.5 V
±200 nA
VDS = VDSS
VGS = 0V
TJ = 125°C
VGS = 10V, ID = 0.5 ⢠ID25, Note 1
50 μA
3 mA
250 mΩ
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
â¢Double metal process for low
gate resistance
â¢miniBLOC, with Aluminium nitride
isolation
â¢Unclamped Inductive Switching (UIS)
rated
â¢Low package inductance
â¢Fast intrinsic Rectifier
Applications
⢠DC-DC converters
⢠Switched-mode and resonant-mode
power supplies
⢠DC choppers
⢠Pulse generators
Advantages
⢠Easy to mount
⢠Space savings
⢠High power density
© 2008 IXYS All rights reserved
DS99027B(05/08)
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