IXFN38N100Q2 Datasheet, PDF (1/4 Pages) IXYS Corporation – N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr

HiPerFET^TM
Power MOSFET
IXFN38N100Q2
N-Channel Enhancement Mode
Avalanche Rated, Low
High dV/dt, Low t_rr
Q_g,
Low
Intrinsic
R_g
V_DSS =
I_D25 =
R_DS(on)=
1000 V
38 A
0.25 Ω
t_rr ≤ 300 ns
Preliminary Data Sheet
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
TT_CC
= 25°C
= 25°C
IT_SJ
≤
≤
I1_{D5M0, °dCi/,dRt} ≤_G
100
=2
A/µs,
Ω
V_DD
≤
V_DSS
T_C = 25°C
50/60 Hz, RMS, t = 1 minute
Mounting torque
Terminal connection torque
Maximum Ratings
1000
1000
±30
±40
38
152
38
60
5.0
20
V
V
V
V
A
A
A
mJ
J
V/ns
890
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
2500
V
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
V_GS = 0 V, I_D = 1mA
V_DS = V_GS, I_D = 8mA
V_GS = ±30 V, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
VN_GoSt=e
10
1
V,
I_D
=
0.5
•
I_D25
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
1000
V
2.5
5.0 V
±200 nA
T_J = 25°C
T_J = 125°C
50 mA
3 mA
0.25 Ω
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
•Double metal process for low
gate resistance
•miniBLOC, with Aluminium nitride
isolation
•Unclamped Inductive Switching (UIS)
rated
•Low package inductance
•Fast intrinsic Rectifier
Applications
• DC-DC converters
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Pulse generators
Advantages
• Easy to mount
• Space savings
• High power density
© 2003 IXYS All rights reserved
DS99027A(06/03)