IXFN38N100P Datasheet, PDF (1/5 Pages) IXYS Corporation – Polar Power MOSFET HiPerFET

Polar^TM Power MOSFET
HiPerFET^TM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN38N100P
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062 in.) from Case for 10
50/60Hz
I_ISOL ≤ 1mA
t = 1min
t = 1s
Mounting Torque
Terminal Connection Torque (M4)
Maximum Ratings
1000
V
1000
V
± 30
V
± 40
V
38
A
120
A
19
A
2
J
20
V/ns
1000
W
-55 ... +150
150
-55 ... +150
300
260
2500
3000
1.5/13
1.3/11.5
30
°C
°C
°C
°C
°C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 3mA
V_GS(th)
V_DS = V_GS, I_D = 1mA
I_GSS
V_GS = ± 30V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
1000
V
3.5
6.5 V
± 300 nA
50 μA
4 mA
210 mΩ
V_DSS =
I_D25 =
≤ R_DS(on)
t_rr
≤
1000V
38A
210mΩ
300ns
miniBLOC, SOT-227 B
E153432
S
G
G = Gate
S = Source
S
D
D = Drain
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
z _{International Standard Package}
z _{Encapsulating Epoxy meets}
UL 94 V-0, Flammability Classification
z _{miniBLOC with Aluminium Nitride}
Isolation
z _{Fast Recovery Diode}
z _{Avalanche Rated}
z _{Low package inductance}
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
Applications
z _{Switched-Mode and Resonant-Mode}
Power Supplies
z _{DC-DC Converters}
z _{Laser Drivers}
z _{AC and DC Motor Drives}
z _{Robotics and Servo Controls}
© 2009 IXYS CORPORATION, All Rights Reserved
DS99866B(7/09)