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IXFN36N100 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFETs Single Die MOSFET | |||
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HiPerFETTM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
V
ISOL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 Mâ¦
Continuous
Transient
TC = 25°C, Chip capability
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS ⤠IDM, di/dt ⤠100 A/µs, VDD ⤠VDSS,
TJ ⤠150°C, RG = 2 â¦
TC = 25°C
50/60 Hz, RMS t = 1 min
IISOL ⤠1 mA
t=1s
Mounting torque
Terminal connection torque
IXFN 36N100
D
V
DSS
ID25
RDS(on)
= 1000V
= 36A
= 0.24â¦
G
S
S
Maximum Ratings
1000
1000
±20
±30
36
144
36
64
4
5
V
V
V
V
A
A
A
mJ
J
V/ns
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
700
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
2500
V~
3000
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Features
⢠Internationalstandardpackages
⢠miniBLOC, with Aluminium nitride
isolation
⢠Low RDS (on) HDMOSTM process
⢠Rugged polysilicon gate cell structure
⢠Unclamped Inductive Switching (UIS)
rated
⢠Low package inductance
⢠FastintrinsicRectifier
Symbol
VDSS
VGH(th)
IGSS
I
DSS
RDS(on)
Test Conditions
VGS = 0 V, ID = 3 mA
VDS = VGS, ID = 8 mA
VGS = ±20 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ⤠300 µs,
duty cycle d ⤠2 %
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
1000
2.5
TJ = 25°C
TJ = 125°C
V
5.0 V
±200 nA
100 µA
2 mA
0.24 â¦
Applications
⢠DC-DC converters
⢠Battery chargers
⢠Switched-mode and resonant-mode
power supplies
⢠DC choppers
⢠Temperature and lighting controls
Advantages
⢠Easy to mount
⢠Space savings
⢠High power density
© 2001 IXYS All rights reserved
98520C (02/01)
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