IXFN360N15T2 Datasheet, PDF (1/6 Pages) IXYS Corporation – GigaMOSTrenchT2 HiperFET Power MOSFET

Advance Technical Information
GigaMOS^TM TrenchT2
HiperFET^TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN360N15T2
V_DSS =
I_D25 =
R_DS(on) ≤
t_rr
≤
150V
310A
4.0mΩ
150ns
miniBLOC, SOT-227
E153432
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_L(RMS)
I_DM
I_A
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C (Chip Capability)
External Lead Current Limit
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 175°C
T_C = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, RMS t = 1 minute
I_ISOL ≤ 1mA
t = 1 second
Mounting Torque
Terminal Connection Torque
Maximum Ratings
150
V
150
V
±20
V
±30
V
310
A
200
A
900
A
100
A
TBD
J
20
V/ns
1070
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
300
°C
260
°C
2500
V~
3000
V~
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
30
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 3mA
V_GS(th)
V_DS = V_GS, I_D = 8mA
I_GSS
V_GS = ±20V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 150°C
R_DS(on)
V_GS = 10V, I_D = 60A, Note 1
Characteristic Values
Min.
Typ. Max.
150
V
2.5
5.0 V
±200 nA
50 μA
5 mA
4.0 mΩ
S
G
G = Gate
S = Source
S
D
D = Drain
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
Features
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation
Isolation voltage 2500 V~
High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
Low R_DS(on)
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
Synchronous Recification
DC-DC Converters
Battery Chargers
Switched-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
© 2009 IXYS CORPORATION, All Rights Reserved
DS100180(08/09)