IXFN360N10T Datasheet, PDF (1/6 Pages) IXYS Corporation – GigaMOS Trench HiperFET Power MOSFET

GigaMOS^TM Trench
HiperFET^TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
IXFN360N10T
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_LRMS
I_DM
I_A
E_AS
P_D
dV/dt
T_J
T_JM
T_stg
T_L
T_SOLD
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C (Chip Capability)
Lead Current Limit, RMS
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 175°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, RMS t = 1 Minute
I_ISOL ≤ 1mA
t = 1 Second
Mounting Torque
Terminal Connection Torque
Maximum Ratings
100
V
100
V
±20
V
±30
V
360
A
200
A
900
A
100
A
3
J
830
W
20
V/ns
-55 ... +175
°C
175
°C
-55 ... +175
°C
300
°C
260
°C
2500
V~
3000
V~
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
30
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 1mA
V_GS(th)
V_DS = V_GS, I_D = 3mA
I_GSS
V_GS = ±20V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 150°C
R_DS(on)
V_GS = 10V, I_D = 100A, Note 1
Characteristic Values
Min. Typ . Max.
100
V
2.5
4.5 V
±200 nA
25 μA
2.5 mA
2.6 mΩ
V_DSS =
I_D25 =
≤ R_DS(on)
t_rr
≤
100V
360A
2.6mΩ
130ns
miniBLOC, SOT-227
E153432
S
G
G = Gate
S = Source
S
D
D = Drain
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
Features
z _{International Standard Package}
z _{175°C Operating Temperature}
z _{High Current Handling Capability}
z _{Avalanche Rated}
z _{Fast Intrinsic Rectifier}
z _{Low RDS(on)}
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
Applications
z _{DC-DC Converters}
z _{Battery Chargers}
z _{Switch-Mode and Resonant-Mode}
Power Supplies
z _{DC Choppers}
z _{AC Motor Drives}
z _{Uninterruptible Power Supplies}
z _{High Speed Power Switching}
Applications
© 2009 IXYS CORPORATION, All Rights Reserved
DS100088A(10/09)