IXFN34N80 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFETTM Power MOSFETs Single DieMOSFET

HiPerFET^TM Power MOSFETs
Single DieMOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t_rr
Preliminary data sheet
IXFN 34N80
D
S
V_DSS = 800 V
I_D25 = 34 A
R_DS(on) = 0.24 W
t_rr £ 250 ns
Symbol Test Conditions
V_DSS
V_DGR
V_GS
V_GSM
I
D25
I_DM
I
AR
E_AR
E_AS
dv/dt
P_D
T
J
T
JM
T_stg
T_L
V_ISOL
M_d
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MW
Continuous
Transient
T
C
= 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S £ I_DM, di/dt £ 100 A/ms, V_DD £ V_DSS,
T_J £ 150°C, R_G = 2 W
T_C = 25°C
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS
I_ISOL£ 1 mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque
Weight
Maximum Ratings
800
V
800
V
±20
V
±30
V
34
A
136
A
34
A
64
mJ
3
J
5 V/ns
miniBLOC, SOT-227 B
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal of miniBLOC can be used
as Main or Kelvin Source
600
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
2500
V~
3000
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Features
· International standard packages
· miniBLOC,with Aluminium nitride
isolation
· Low R_{DS (on)} HDMOS^TM process
· Rugged polysilicon gate cell structure
· Unclamped Inductive Switching (UIS)
rated
· Low package inductance
· Fast intrinsic Rectifier
Symbol
V_DSS
V_GS(th)
I_GSS
I
DSS
R
DS(on)
Test Conditions
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ.
max.
V_GS = 0 V, I_D = 3 mA
V_DSS temperature coefficient
V_DS = V_GS, I_D = 8 mA
V_GS(th) temperature coefficient
V_GS = ±20 V_DC, V_DS = 0
V =V
DS
DSS
V_GS = 0 V
V = 10 V, I = 0.5 • I
GS
D
D25
Pulse test, t £ 300 ms,
duty cycle d £ 2 %
800
3.0
T=
J
25°C
T_J = 125°C
0.096
-0.214
V
%/K
5.0 V
%/K
±200 nA
100 mA
2 mA
0.24 W
Applications
· DC-DC converters
· Battery chargers
· Switched-mode and resonant-mode
power supplies
· DC choppers
· Temperature and lighting controls
Advantages
· Easy to mount
· Space savings
· High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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