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IXFN34N100 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs Single Die MOSFET | |||
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HiPerFETTM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Symbol
VDSS
VDGR
V
GS
VGSM
ID25
I
DM
I
AR
EAR
EAS
dv/dt
P
D
TJ
TJM
Tstg
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
TC = 25°C, Chip capability
T
C
=
25°C,
pulse
width
limited
by
T
JM
T
C
= 25°C
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ£ 150°C, RG = 2 W
T=
C
25°C
50/60 Hz, RMS t = 1 min
I
ISOL
£
1
mA
t=1s
Mounting torque
Terminal connection torque
IXFN 34N100
D
V = 1000V
DSS
ID25 = 34A
= RDS(on) 0.28W
G
S
S
Maximum Ratings
1000
1000
±20
±30
34
136
34
64
4
5
V
V
V
V
A
A
A
mJ
J
V/ns
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
700
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
2500
V~
3000
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Features
 Internationalstandardpackages
 miniBLOC, with Aluminium nitride
isolation
 Low RDS (on) HDMOSTM process
 Rugged polysilicon gate cell structure
 Unclamped Inductive Switching (UIS)
rated
 Low package inductance
 FastintrinsicRectifier
Symbol
VDSS
VGH(th)
IGSS
IDSS
RDS(on)
Test Conditions
VGS = 0 V, ID = 3 mA
VDS = VGS, ID = 8 mA
VGS = ±20 VDC, VDS = 0
VDS = VDSS
V =0V
GS
VGS = 10 V, ID = 0.5 ⢠ID25
Pulse test, t £ 300 ms,
duty cycle d £ 2 %
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
1000
2.5
TJ = 25°C
T
J
=
125°C
V
5.0 V
±200 nA
100 mA
2 mA
0.28 W
Applications
 DC-DC converters
 Battery chargers
 Switched-mode and resonant-mode
power supplies
 DC choppers
 Temperature and lighting controls
Advantages
 Easy to mount
 Space savings
 High power density
© 2001 IXYS All rights reserved
98763A (02/01)
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